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| BD910_15 Datasheet, PDF (2/5 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Power Transistors | |||
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
BD910 BD912
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
BD910
BD912
IC=-0.1A; IB=0
VCEsat-1 Collector-emitter saturation voltage IC=-5 A;IB=-0.5 A
VCEsat-2 Collector-emitter saturation voltage IC=-10A;IB=-2.5 A
VBEsat Base-emitter saturation voltage
IC=-10A;IB=-2.5 A
VBE
Base-emitter voltage
IC=-5A ; VCE=-4V
BD910
VCB=-80V; IE=0
TC=25
ICBO
Collector cut-off current
BD912
VCB=-100V; IE=0
TC=25
BD910 VCE=-40V; IB=0
ICEO
Collector cut-off current
BD912 VCE=-50V; IB=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-0.5A ; VCE=-4V
hFE-2
DC current gain
IC=-5A ; VCE=-4V
hFE-3
DC current gain
IC=-10A ; VCE=-4V
fT
Transition frequency
IC=-0.5A ; VCE=-4V
MIN TYP. MAX UNIT
-80
V
-100
-1.0
V
-3.0
V
-2.5
V
-1.5
V
-0.5
-5.0
mA
-0.5
-5.0
-1.0
mA
-1.0
mA
40
250
15
150
5
3
MHz
2
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