BD910_15 Datasheet, PDF (1/5 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Power Transistors

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
BD910 BD912
DESCRIPTION
With TO-220C package
Complement to type BD909 BD911
APPLICATIONS
Intented for use in power linear
and switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
BD910
BD912
CONDITIONS
Open emitter
V_CEO
Collector-emitter voltage
BD910
BD912
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_B
Base current
P_C
Collector power dissipation
T_C 25
T_j
Junction temperature
T_stg
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
-80
-100
-80
-100
-5
-15
-5
90
150
-65~150
UNIT
V
V
V
A
A
W
MAX
1.4
UNIT
/W
f