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| 2SD1213_15 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors | |||
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Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO
Collector-emitter breakdown voltage IC=1mA ;RBE=
VCBO
Collector-base breakdown voltage
IC=1mA; IE=0
VEBO
Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=8A; IB=0.4A
ICBO
Collector cut-off current
VCB=40V; IE=0
IEBO
Emitter cut-off current
VEB=4V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=2V
hFE-2
DC current gain
IC=10A ; VCE=2V
fT
Transition frequency
IC=1A ; VCE=5V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=10A
IB1=-IB2=-0.5A
hFE-1 Classifications
Q
R
70-140
100-200
S
140-280
www.jmnic.com
2SD1213
MIN
TYP. MAX UNIT
30
V
60
V
6
V
0.4
V
0.1
mA
0.1
mA
70
280
30
120
MHz
0.3
s
0.6
s
0.02
s
JMnic
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