2SD1213_15 Datasheet, PDF (1/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors

Product Specification
Silicon NPN Power Transistors
DESCRIPTION
With TO-3PN package
Low collector-to-emitter saturation voltage
: V_CE(sat)= 0.4V(max.)
Large current capacity.
Complement to type 2SB904
APPLICATIONS
Large current switching of relay drivers,
high-speed inverters, converters.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
www.jmnic.com
2SD1213
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current (DC)
I_CP
Collector current (Pulse)
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
T_a=25
VALUE
60
30
6
20
30
60
2.5
150
-55~150
UNIT
V
V
V
A
A
W
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