 English |
|
|
|
|
|
|
|
| 2SD1062_2015 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors | |||
| |||
| ◁ |
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;RBE=
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat
ICBO
IEBO
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
IC=6A, IB=0.3A
VCB=40V;IE=0
VEB=4V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=2V
hFE-2
DC current gain
IC=5A ; VCE=2V
fT
Transition frequency
IC=1A ; VCE=5V
Switching times
ton
Turn-on time
ts
Storage time
IC=5.0A IB1=- IB2=0.5A
tf
Fall time
hFE-1 classifications
Q
R
S
70-140 100-200 140-280
www.jmnic.com
2SD1062
MIN TYP. MAX UNIT
50
V
60
V
6
V
0.4
V
0.1 mA
0.1 mA
70
280
30
10
MHz
0.10
s
0.05
s
1.20
s
JMnic
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese