2SD1062_2015 Datasheet, PDF (1/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors

Product Specification
Silicon NPN Power Transistors
DESCRIPTION
With TO-220 package
Low collector saturation voltage
Complement to type 2SB826
Wide area of safe operation
APPLICATIONS
Relay drivers,
High-speed inverters,
Converters
General high-current switching
applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current (DC)
I_CM
Collector current-peak
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
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2SD1062
VALUE
60
50
6
12
15
40
150
-55~150
UNIT
V
V
V
A
A
W
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