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| 2SC4060_15 Datasheet, PDF (2/2 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistor | |||
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Product Specification
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 10A; IB= 2A
ICBO
Collector Cutoff Current
VCB= 600V; IE= 0
ICEO
Collector Cutoff Current
VCE= 450V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE-1
DC Current Gain
IC= 10A; VCE= 5V
hFE-2
DC Current Gain
IC= 1mA; VCE= 5V
fT
Current-GainâBandwidth Product
IC= 2A; VCE= 10V
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 10A,IB1= 2A; IB2= -4A
RL= 15 ; VBB2= 4V
2SC4060
MIN TYP. MAX UNIT
450
V
1.0
V
1.5
V
0.1 mA
0.1 mA
0.1 mA
10
5
20
MHz
0.5
s
2.0
s
0.2
s
Website www.jmnic.com
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