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| 2SC4060_15 Datasheet, PDF (1/2 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistor | |||
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Product Specification
Silicon NPN Power Transistor
DESCRIPTION
High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 450V(Min)
High Switching Speed
High Reliability
APPLICATIONS
Designed for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25 )
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
600
V
VCEO
Collector-Emitter Voltage
450
V
VEBO
Emitter-Base voltage
7
V
IC
Collector Current-Continuous
20
A
ICM
Collector Current-Peak
40
A
IB
Base Current-Continuous
7
A
IBM
Base Current-Peak
Collector Power Dissipation
PC
@ TC=25
TJ
Junction Temperature
14
A
150
W
150
Tstg
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 0.83
/W
Website www.jmnic.com
2SC4060
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