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| 2SC3866_15 Datasheet, PDF (2/2 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistor | |||
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Product Specification
Silicon NPN Power Transistor
www.jmnic.com
2SC3866
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 1A; IB= 0.2A
ICBO
Collector Cutoff Current
VCB= 900V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 10V; IC= 0
hFE
DC Current Gain
IC= 1A; VCE= 5V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 2A , IB1= 0.4A; IB2= -0.8A
RL=150 ;
PW=20 s; Duty 2%
MIN TYP. MAX UNIT
800
V
900
V
10
V
1.0
V
1.5
V
1.0 mA
1.0 mA
10
1.0
s
4.0
s
0.8
s
2
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