2SC3866_15 Datasheet, PDF (1/2 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistor

Product Specification
Silicon NPN Power Transistor
DESCRIPTION
High Breakdown Voltage-
: V_(BR)CBO= 900V(Min)
High Switching Speed
High Reliability
APPLICATIONS
Switching regulators
Ultrasonic generators
High frequency inverters
General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(T_a=25 )
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current-Continuous
I_B
Base Current-Continuous
P_C
Collector Power Dissipation
@ T_C=25
T_J
Junction Temperature
T_stg
Storage Temperature Range
900
V
800
V
10
V
3
A
1
A
40
W
150
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case 1.5
/W
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2SC3866