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| 2SC2335_15 Datasheet, PDF (2/4 Pages) Renesas Technology Corp – SILICON POWER TRANSISTO | |||
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JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(SUS)CEO Collector-emitter sustaining voltage IC=3.0A ; IB1=0.6A,L=1mH
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A
VBEsat Base-emitter saturation voltage
IC=3A; IB=0.6A
ICBO
Collector cut-off current
ICEX
Collector cut-off current
IEBO
Emitter cut-off current
VCB=400V ;IE=0
VCE=400V ;VBE(off)=-1.5V
TC=125
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=5V
hFE-2
DC current gain
IC=1.0A ; VCE=5V
hFE-3
DC current gain
IC=3.0A ; VCE=5V
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
VCC=150V;IC=3.0A;
IB1=-IB2=600mA;
RL=50
 hFE-2 Classifications
M
L
K
20-40 30-60 40-80
Product Specification
2SC2335
MIN TYP. MAX UNIT
400
V
1.0
V
1.2
V
10
A
10
A
5.0
mA
10
A
20
80
20
80
10
1.0
s
2.5
s
1.0
s
2
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