2SC2335_15 Datasheet, PDF (1/4 Pages) Renesas Technology Corp – SILICON POWER TRANSISTO

JMnic
Silicon NPN Power Transistors
DESCRIPTION
With TO-220C package
Collector-emitter sustaining voltage
V_CEO(sus)=400V(Min)
Collector-emitter saturation voltage
V_CE(sat)=1.0V(Max.)@I_C=3.0A,I_B=0.6A
Switching time-t_f=1.0 s(Max.)@I_C=3.0A
APPLICATIONS
Designed for use in high-voltage ,high-
speed ,power switching in inductive circuit,
particularly suited for 115 and 220V switch-
mode applications such as switching
regulator’s ,inverters,,DC-DC and converter
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
I_B
Base current
P_D
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-C}
Thermal resistance junction to case
Product Specification
2SC2335
VALUE
500
400
7
7
15
3.5
40
150
-50~150
UNIT
V
V
V
A
A
A
W
MAX
3.125
UNIT
/W