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| 2SC2334_2014 Datasheet, PDF (2/4 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistor | |||
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Product Specification
www.jmnic.com
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 5.0A ; IB= 0.5A, L=1mH
VCEX(SUS)-1 Collector-Emitter Sustaining Voltage
VCEX(SUS)-2 Collector-Emitter Sustaining Voltage
IC= 5.0A ; IB1=-IB2= 0.5A,
VBE(off)=5.0V, L=180 H,clamped
IC= 10A ; IB1= 1.0A; IB2= -0.5A,
VBE(off)= -5.0V, L= 180 H,clamped
VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB= 0.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5.0A; IB= 0.5A
ICBO
Collector Cutoff Current
VCB= 100V ; IE= 0
ICER
Collector Cutoff Current
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 100V ; RBE= 51 ,Ta=125
VCE= 100V; VBE(off)= -1.5V
VCE= 100V; VBE(off)= -1.5V,Ta=125
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.5A ; VCE= 5V
hFE-2
DC Current Gain
IC= 3.0A ; VCE= 5V
hFE-3
DC Current Gain
IC= 5.0A ; VCE= 5V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 5.0A ,RL= 10 ,
IB1= -IB2= 0.5A,VCC 50V
2SC2334
MIN MAX UNIT
100
V
100
V
100
V
0.6
V
1.5
V
10
A
1.0
mA
10
A
1.0
mA
10
A
40
200
70
140
20
0.5
s
1.5
s
0.5
s
JMnic
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