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| 2SC2334_2014 Datasheet, PDF (1/4 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistor | |||
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Product Specification
Silicon NPN Power Transistor
DESCRIPTION
Low Collector Saturation Voltage
Fast Switching Speed
Complement to Type 2SA1010
APPLICATIONS
Developed for high-voltage high-speed switching, and is
ideal for use as a driver in devices such as switching reg-
lators, DC/DC converters, and high frequency power am-
plifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25 )
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
150
V
VCEO Collector-Emitter Voltage
100
V
VEBO Emitter-Base Voltage
7.0
V
IC
Collector Current-Continuous
7.0
A
ICM
Collector Current-Peak
15
A
IB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25
PC
Total Power Dissipation
@ TC=25
TJ
Junction Temperature
3.5
A
1.5
W
40
150
Tstg
Storage Temperature Range
-55~150
www.jmnic.com
2SC2334
JMnic
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