 English |
|
|
|
|
|
|
|
| 2SB1145_2014 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Power Transistors | |||
| |||
| ◁ |
JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-base breakdown voltage
IC=-100 A; IE=0
V(BR)CEO Collector-emitter breakdown voltage IC=-5mA; IB=0
VCEsat Collector-emitter saturation voltage IC=-1.5A ; IB=-3mA
VBEsat Base-emitter saturation voltage
IC=-1.5A ; IB=-3mA
ICBO
Collector cut-off current
VCB=-120V;IE=0
IEBO
Emitter cut-off current
VEB=-5V;IC=0
hFE
DC current gain
IC=-1.5A ; VCE=-3V
Product Specification
2SB1145
MIN TYP. MAX UNIT
-120
V
-120
V
-1.5
V
-2.0
V
-50
A
-3.0 mA
2000
2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese