2SB1145_2014 Datasheet, PDF (1/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Power Transistors

JMnic
Silicon PNP Power Transistors
Product Specification
2SB1145
DESCRIPTION
With TO-220F package
High DC current gain.
DARLINGTON
Low collector saturation voltage
APPLICATIONS
For high current driver and power
driver applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
P_C
Collector dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
T_a=25
VALUE
-120
-120
-6
-3
-5
20
2
150
-55~150
UNIT
V
V
V
A
A
W