2SA877 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

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Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_(BR)CEO
Collector-emitter
breakdown voltage
2SA877
2SA878
I_C=-0.1A ;I_B=0
V_(BR)EBO Emitter-base breakdown voltage
I_E=-1mA ;I_C=0
V_CEsat Collector-emitter saturation voltage I_C=-5A; I_B=-0.5A
2SA877 V_CB=-80V; I_E=0
I_CBO
Collector cut-off current
2SA878 V_CB=-120V; I_E=0
I_EBO
Emitter cut-off current
V_EB=-6V; I_C=0
h_FE
DC current gain
I_C=-3A ; V_CE=-4V
C_OB
Output capacitance
I_E=0 ; V_CB=-10V; f=1.0MHz
f_T
Transition frequency
I_C=-1A ; V_CE=-12V
Product Specification
2SA877 2SA878
MIN TYP. MAX UNIT
-80
V
-120
-6
V
-2.0
V
-0.1 mA
-0.1 mA
50
255
pF
15
MHz
2