2SA877 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

JMnic
Silicon PNP Power Transistors
Product Specification
2SA877 2SA878
DESCRIPTION
With TO-3 package
High power dissipation
APPLICATIONS
Power amplifier applications
Recommended for high-power high-fidelity
audio frequency amplifier output stage
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
2SA877
2SA878
Open emitter
V_CEO
Collector-emitter voltage
2SA877
2SA878
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
P_C
Collector power dissipation
T_C=25
T_j
Junction temperature
T_stg
Storage temperature
VALUE
-80
-120
-80
-120
-6
-10
100
150
-55~150
UNIT
V
V
V
A
W