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| 2N6326 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors | |||
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JMnic
Silicon NPN Power Transistors
Product Specification
2N6326 2N6327 2N6328
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6326
2N6327 IC=0.2 A ;IB=0
2N6328
VCEsat Collector-emitter saturation voltage IC=15A; IB=1.5A
VBEsat Base-emitter saturation voltage
IC=15A; IB=1.5A
VBE
Base-emitter on voltage
IC=8A ; VCE=4V
2N6326
VCB=60V; IE=0
TC=150
ICBO
Collector cut-off current 2N6327
VCB=80V; IE=0
TC=150
2N6328
VCB=100V; IE=0
TC=150
IEBO
Emitter cut-off current
VEB=4V; IC=0
hFE-1
DC current gain
IC=8A ; VCE=4V
hFE-2
DC current gain
IC=30A ; VCE=4V
fT
Transition frequency
IC=1A ; VCE=10V;f=1.0MHz
MIN TYP. MAX UNIT
60
80
V
100
1.2
V
1.5
V
1.5
V
1.0
5.0
1.0
5.0
mA
1.0
5.0
1.0 mA
25
6
30
3
MHz
2
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