2N6326 Datasheet, PDF (1/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

JMnic
Silicon NPN Power Transistors
DESCRIPTION
With TO-3 package
Low collector saturation voltage
High DC current gain
APPLICATIONS
Designed for audio amplifier and
switching circuits applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Product Specification
2N6326 2N6327 2N6328
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
2N6326
V_CBO
Collector-base voltage 2N6327
2N6328
2N6326
V_CEO
Collector-emitter voltage 2N6327
2N6328
V_EBO
Emitter-base voltage
I_C
Collector current
I_B
Base current
P_D
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
60
80
100
60
80
100
5
30
7.5
200
200
-65~200
UNIT
V
V
V
A
A
W
VALUE
0.875
UNIT
/W