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| 2N6298 Datasheet, PDF (2/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(8A, 75W) | |||
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Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6298
2N6299
IC=0.1A ; IB=0
VCEsat-1 Collector-emitter saturation voltage IC=4A; IB=16mA
VCEsat-2
VBEsat
VBE
ICEX
ICEO
IEBO
hFE-1
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base -emitter on voltage
Collector cut-off current
2N6298
2N6299
Collector cut-off current
2N6298
2N6299
Emitter cut-off current
DC current gain
IC=8A; IB=80mA
IC=8A; IB=80mA
IC=4A ; VCE=3V
VCE=60V; VBE(off)=1.5V
TC=150
VCE=80V; VBE(off)=1.5V
TC=150
VCE=30V; IB=0
VCE=40V; IB=0
VEB=5V; IC=0
IC=4A ; VCE=3V
hFE-2
DC current gain
IC=8A ; VCE=3V
COB
Output capacitance
IE=0 ; VCB=10V;f=0.1MHz
www.jmnic.com
2N6298 2N6299
MIN TYP. MAX UNIT
60
V
80
2.0
V
3.0
V
4.0
V
2.8
V
0.5
5.0
mA
0.5
5.0
0.5
mA
2.0
mA
750
18000
100
300
pF
JMnic
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