2N6298 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(8A, 75W)

Product Specification
Silicon PNP Power Transistors
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2N6298 2N6299
DESCRIPTION
With TO-66 package
DARLINGTON
Low collector saturation voltage
Complement to type 2N6300/6301
APPLICATIONS
General purpose power amplifier and
low frequency switching applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
2N6298
2N6299
V_CEO
Collector-emitter voltage
2N6298
2N6299
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
I_B
Base current
P_T
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
VALUE
60
80
60
80
5
8
16
0.12
75
200
-65~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-C}
Thermal resistance from junction to case
MAX
2.33
UNIT
/W
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