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| 2N6260 Datasheet, PDF (2/3 Pages) Seme LAB – Bipolar NPN Device | |||
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Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1 A ; IB=0
VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.15A
VBE
Base -emitter on voltage
ICEV
Collector cut-off current
ICEO
Collector cut-off current
IC=1.5A ; VCE=2V
VCE=40V;VBE(off)=-1.5V
TC=150
VCE=30V; IB=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE-1
DC current gain
IC=4A ; VCE=2V
hFE-2
DC current gain
IC=1.5A ; VCE=2V
www.jmnic.com
2N6260
MIN TYP. MAX UNIT
80
V
1.5
V
1.5
V
0.5
1.0
mA
0.5
mA
0.2
mA
5
20
100
JMnic
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