2N6260 Datasheet, PDF (1/3 Pages) Seme LAB – Bipolar NPN Device

Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2N6260
DESCRIPTION
With TO-66 package
Low saturation voltage
Wide safe operating area
APPLICATIONS
Power switching circuits
High-fidelity amplifers
Solenoid drivers
Series and shunt-regulator driver
and output stages
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_B
Base current
P_T
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
VALUE
50
40
7
4
2
29
150
-65~200
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-C}
Thermal resistance junction to case
MAX
3.5
UNIT
/W
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