2N5989 Datasheet, PDF (2/3 Pages) Motorola, Inc – 12 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 40,60,80 VOLTS 100 WATTS

Product Specification
Silicon NPN Power Transistors
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2N5989 2N5990 2N5991
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
V_CEO
Collector-emitter
sustaining voltage
2N5989
2N5990
2N5991
V_CEsat-1 Collector-emitter saturation voltage
V_CEsat-2 Collector-emitter saturation voltage
V_BEsat Base-emitter saturation voltage
V_BE
Base-emitter on voltage
2N5989
I_CEO
Collector cut-off current 2N5990
2N5991
I_CEX
Collector cut-off current
I_EBO
Emitter cut-off current
h_FE-1
DC current gain
h_FE-2
DC current gain
h_FE-3
DC current gain
C_OB
Output capacitance
f_T
Transition frequency
CONDITIONS
I_C=0.2A ;I_B=0
I_C=6A ;I_B=0.6A
I_C=12A; I_B=1.8A
I_C=12A; I_B=1.8A
I_C=6A ; V_CE=2V
V_CE=20V; I_B=0
V_CE=30V; I_B=0
V_CE=40V; I_B=0
V_CE=RatedV_CE;V_BE=-1.5V
T_C=125
V_EB=5V; I_C=0
I_C=1.5A ; V_CE=2V
I_C=6A ; V_CE=2V
I_C=12A ; V_CE=2V
I_E=0 ; V_CB=10V;f=1MHz
I_C=0.5A ; V_CE=10V;f=1MHz
MIN TYP. MAX UNIT
40
60
V
80
0.6
V
1.7
V
2.5
V
1.4
V
2.0
mA
0.2
2.0
mA
1.0
mA
40
20
120
7.0
300
pF
2.0
MHz
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