2N5989 Datasheet, PDF (1/3 Pages) Motorola, Inc – 12 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 40,60,80 VOLTS 100 WATTS

Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2N5989 2N5990 2N5991
DESCRIPTION
With TO-3PN package
Complement to type 2N5986 2N5987 2N5988
Low collector-emitter saturation voltage
APPLICATIONS
Designed for use in general purpose
power amplifier and switching circuits.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
2N5989
V_CBO
Collector-base voltage
2N5990 Open emitter
2N5991
2N5989
V_CEO
Collector-emitter voltage 2N5990 Open base
2N5991
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_CM
Collector current-peak
I_B
Base current
P_C
Collector power dissipation
T_C=25
T_j
Junction temperature
T_stg
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
JMnic
VALUE
60
80
100
40
60
80
5
12
20
4
100
150
-65~150
UNIT
V
V
V
A
A
A
W
MAX
1.25
UNIT
/W