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| 2N5622_15 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors | |||
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Product Specification
www.jmnic.com
Silicon NPN Power Transistors 2N5622 2N5624 2N5626 2N5628
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO
Collector-emitter
sustaining voltage
2N5622
2N5624/5626 IC=50mA ;IB=0
2N5628
VCEsat Collector-emitter saturation voltage
IC=5A; IB=0.5A
VBE
Base-emitter on voltage
IC=5A ; VCE=5V
ICBO
Collector cut-off current
VCB=Rated VCBO; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
2N5622/5626
2N5624/5628
IC=5A ; VCE=5V
2N5622/5626
fT
Transition frequency
IC=1A ; VCE=12V
2N5624/5628
MIN TYP. MAX UNIT
60
80
V
100
2.0
V
1.5
V
0.1 mA
0.1 mA
70
200
30
90
40
MHz
30
JMnic
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