2N5622_15 Datasheet, PDF (1/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors

Product Specification
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Silicon NPN Power Transistors 2N5622 2N5624 2N5626 2N5628
DESCRIPTION
With TO-3 package
Excellent safe operating area
Low collector-emitter saturation voltage
APPLICATIONS
For audio and general-purpose
applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
2N5622
V_CBO
Collector-base voltage 2N5624/5626 Open emitter
2N5628
2N5622
V_CEO
Collector-emitter voltage 2N5624/5626 Open base
2N5628
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
P_D
Total power dissipation
T_C=25
T_j
Junction temperature
T_stg
Storage temperature
VALUE
60
80
100
80
100
120
5
10
100
150
-65~200
UNIT
V
V
V
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
1.5
UNIT
/W
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