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| 2N5597_15 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Power Transistors | |||
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Product Specification
www.jmnic.com
Silicon PNP Power Transistors 2N5597 2N5599 2N5601 2N5603
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO
Collector-emitter
sustaining voltage
2N5597
2N5599/5601 IC=50mA ;IB=0
2N5603
VCEsat
VBE
ICBO
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
IC=1A; IB=0.1A
IC=1A ; VCE=5V
VCB=Rated VCBO; IE=0
ICEO
Collector cut-off current
VCE= Rated VCEO,IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
2N5597/5601
2N5599/5603
IC=1A ; VCE=5V
2N5597/5601
fT
Transition frequency
IC=0.5A ; VCE=10V
2N5599/5603
MIN TYP. MAX UNIT
60
80
V
100
1.0
V
1.5
V
0.1 mA
1.0 mA
0.1 mA
70
200
30
90
60
MHz
50
JMnic
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