2N5597_15 Datasheet, PDF (1/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Power Transistors

Product Specification
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Silicon PNP Power Transistors 2N5597 2N5599 2N5601 2N5603
DESCRIPTION
With TO-66 package
Excellent safe operating area
Low collector-emitter saturation voltage
APPLICATIONS
For high frequency power amplifier ;
audio power amplifier and drivers.
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
2N5597
V_CBO
Collector-base voltage 2N5599/5601 Open emitter
2N5603
2N5597
V_CEO
Collector-emitter voltage 2N5599/5601 Open base
2N5603
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
P_D
Total power dissipation
T_C=25
T_j
Junction temperature
T_stg
Storage temperature
VALUE
60
80
100
80
100
120
5
2
20
150
-65~150
UNIT
V
V
V
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
4.37
UNIT
/W
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