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| 2N5559_15 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors | |||
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Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0
VCEsat Collector-emitter saturation voltage IC=10A; IB=2A
VBE
Base-emitter on voltage
IC=10A ; VCE=4V
ICEO
Collector cut-off current
ICEX
Collector cut-off current
IEBO
Emitter cut-off current
VCE=140V; IB=0
VCE=120V; VBE(off)=1.5V
TC=150
VEB=7V; IC=0
hFE
DC current gain
IC=5A ; VCE=5V
www.jmnic.com
2N5559
MIN TYP. MAX UNIT
120
V
5.0
V
5.7
V
5.0
mA
2.0
10
mA
2.0
mA
20
60
JMnic
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