2N5559_15 Datasheet, PDF (1/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors

Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2N5559
DESCRIPTION
With TO-3 package
Excellent safe operating area
APPLICATIONS
For industrial and commercial equipment
including high fidelity audio amplifiers,
series and shunt regulators and power
switches applications
PINNING
PIN
1
DESCRIPTION
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
150
120
7
10
15
100
150
-65~200
UNIT
V
V
V
A
A
W
VALUE
1.5
UNIT
/W
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