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| 2N4918 Datasheet, PDF (2/3 Pages) ON Semiconductor – GENERAL.PURPOSE POWER TRANSISTORS | |||
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Product Specification
Silicon PNP Power Transistors
www.jmnic.com
2N4918 2N4919 2N4920
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
2N4918
-40
VCEO
Collector-emitter
sustaining voltage
2N4919 IC=-0.1A; IB=0
-60
V
2N4920
-80
VCEsat
VBEsat
VBE
Collector-emitter saturation voltage
Emitter-base saturation voltage
Emitter-base on voltage
IC=-1.0A ;IB=-0.1A
IC=-1.0A ;IB=-0.1A
IC=-1A ; VCE=-1V
-0.6
V
-1.3
V
-1.3
V
2N4918 VCE=-20V; IB=0
ICEO
Collector cut-off current 2N4919 VCE=-30V; IB=0
-0.5 mA
2N4920 VCE=-40V; IB=0
ICBO
Collector cut-off current
ICEX
Collector cut-off current
IEBO
Emitter cut-off current
VCB= Rated VCBO ;IE=0
VCE= Rated VCEO; VBE(off)=1.5V
TC=125
VEB=-5V; IC=0
-0.1 mA
-0.1
-0.5
mA
-1.0 mA
hFE-1
DC current gain
IC=-50mA ; VCE=-1V
40
hFE-2
DC current gain
IC=-500mA ; VCE=-1V
30
150
hFE-3
DC current gain
IC=-1A ; VCE=-1V
10
fT
Transition frequency
COB
Output capacitance
IC=-250mA ; VCE=-10V;f=1MHz 3.0
f=100kHz ; VCB=-10V;IE=0
MHz
100 pF
JMnic
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