2N4918 Datasheet, PDF (1/3 Pages) ON Semiconductor – GENERAL.PURPOSE POWER TRANSISTORS

Product Specification
Silicon PNP Power Transistors
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2N4918 2N4919 2N4920
DESCRIPTION
With TO-126 package
Complement to type 2N4921,2N4922 2N4923
Excellent safe operating area
Low collector-emitter saturation voltage
APPLICATIONS
For driver circuits ,switching ,and
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
2N4918
V_CBO
Collector-base voltage
2N4919
2N4920
2N4918
V_CEO
Collector-emitter voltage 2N4919
2N4920
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-Peak
I_B
Base current
P_D
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
-40
-60
-80
-40
-60
-80
-5
-1
-3
-1
30
150
-65~150
UNIT
V
V
V
A
A
A
W
VALUE
4.16
UNIT
/W
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