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JCT151-650R Datasheet, PDF (7/7 Pages) JIEJIE MICROELECTRONICS CO.,Ltd – JCT151 series of silicon controlled rectifiers
JCT151 Series
FIG.1: Maximum power dissipation versus RMS
on-state current
P(w)
20
15
JieJie Microelectronics CO. , Ltd
FIG.2: RMS on-state current versus case
temperature
IT(RMS) (A)
18
α=180°
15
TO-220B(Non-Ins)/
TO-220C/ TO-263
TO-251/
12
TO-252
10
5
0
0
3
IT(RMS) (A)
6
9
12
16
FIG.3: Surge peak on-state current versus
number of cycles
ITSM (A)
140
120
tp=10ms
One cycle
100
80
60
40
20
0
Number of cycles
1
10
100
1000
FIG.5: Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and
corresponging value of I2t (dI/dt < 50A/μs)
ITSM (A), I2t (A2s)
1000
9
TO-220F(Ins)/
TO-220FP(Ins)
6
3
0
Tc (℃)
0
25
50
75
100
125
FIG.4: On-state characteristics (maximum
values)
ITM (A)
100
Tj=125℃
10
Tj=25℃
1
VTM (V)
0
1
2
3
4
5
FIG.6: Relative variations of gate trigger
current, holding current and latching current
versus junction temperature
IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃)
3.0
dI/dt
100
ITSM
I2t
2.5
2.0
IGT
1.5 IH&IL
1.0
0.5
10
0.01
tp(ms)
0.1
1
0.0
Tj(℃)
10
-40 -20 0 20 40 60 80 100 120 140
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This document is the fifth version which is made in 6-Aug.-2015. This document
supersedes and replaces all information previously supplied.
is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd.
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