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| JCT151-650R Datasheet, PDF (2/7 Pages) JIEJIE MICROELECTRONICS CO.,Ltd – JCT151 series of silicon controlled rectifiers | |||
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JCT151 Series
I2t value for fusing (tp=10ms)
Repetitive rate of rise of on-state current
(IG=2ÃIGT)
Peak gate current
Peak gate power
Average gate power dissipation
JieJie Microelectronics CO. , Ltd
I2t
72
A2s
dIT/dt
50
A/μs
IGM
2
A
PGM
5
W
PG(AV)
0.5
W
ELECTRICAL CHARACTERISTICS (Tj=25â unless otherwise specified)
Symbol
Test Condition
MIN.
Value
TYP.
MAX.
IGT
VD=12V RL=33Ω
VGT
-
4
15
-
0.75
1.5
VGD VD=VDRM Tj=125â RL=3.3KΩ
0.2
-
-
IL
IG=1.2IGT
-
12
40
IH
IT=500mA
-
12
30
dV/dt VD=2/3VDRM Gate Open Tj=125â 200
400
-
Unit
mA
V
V
mA
mA
V/μs
STATIC CHARACTERISTICS
Symbol
Parameter
VTM ITM=23A tp=380μs
Tj=25â
IDRM
IRRM
VD=VDRM VR=VRRM
Tj=25â
Tj=125â
Value(MAX) Unit
1.7
V
10
μA
1
mA
THERMAL RESISTANCES
Symbol
Parameter
Rth(j-mb)
Junction to mounting
base
TO-251/ TO-252
TO-220B (Non-Ins)/
TO-220C
TO-220F (Ins)/
TO-220FP (Ins)
TO-263
Value
2.0
1.7
4.5
1.5
Unit
â/W
TELï¼+86-513-83639777
- 2 / 7-
http://www.jjwdz.com
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