JCT825I Datasheet, PDF (4/4 Pages) JIEJIE MICROELECTRONICS CO.,Ltd – Storage junction temperature range

JCT825i
FIG.3: Surge peak on-state current versus
number of cycles
ITSM (A)
400
tp=10ms
One cycle
300
JieJie Microelectronics CO. , Ltd
FIG.4: On-state characteristics (maximum
values)
ITM (A)
400
100
Tj=125℃
200
100
0
Number of cycles
1
10
100
1000
FIG.5: Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and
corresponging value of I² t (dI/dt < 150A/μs)
ITSM (A), I²t (A² s)
4000
1000
ITSM
I²t
dI/dt
100
10
tp(ms)
0.01
0.1
1
10
Tj=25℃
10
1
VTM (V)
0
1
2
3
4
5
FIG.6: Relative variations of gate trigger
current, holding current and latching current
versus junction temperature
IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃)
3.0
2.5
2.0
IGT
1.5
IH&IL
1.0
0.5
0.0
-40 -20 0
Tj(℃)
20 40 60
80 100 120 140
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