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| JCT825I Datasheet, PDF (2/4 Pages) JIEJIE MICROELECTRONICS CO.,Ltd – Storage junction temperature range | |||
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JCT825i
Critical rate of rise of on-state current
(IG=2ÃIGT)
Peak gate current
Average gate power dissipation
Peak gate power
JieJie Microelectronics CO. , Ltd
dI/dt
IGM
PG(AV)
PGM
150
A/μs
3.5
A
0.8
W
35
W
ELECTRICAL CHARACTERISTICS (Tj=25â unless otherwise specified)
Symbol
Test Condition
MIN.
Value
TYP.
MAX.
IGT
VD=12V RL=33Ω
VGT
1
-
35
-
-
1.5
VGD VD=VDRM Tj=125â RL=3.3KΩ
0.2
-
-
IL
IG=1.2IGT
-
-
90
IH
IT=500mA
-
-
50
dV/dt VD=2/3VDRM Gate Open Tj=125â 500
-
-
tgt
VD=VDRM(max) IG=0.1A ITM=40A
dIG/dt=5A/μs
-
VD=67%VDRM(max) Tj=125â
tq
ITM=50A VR=25V dITM/dt=30A/μs
-
dVD/dt=50V/μs RGK=100Ω
2
-
35
-
Unit
mA
V
V
mA
mA
V/μs
μs
μs
STATIC CHARACTERISTICS
Symbol
Parameter
VTM ITM=50A tp=380μs
Tj=25â
IDRM
IRRM
VD=VDRM VR=VRRM
Tj=25â
Tj=125â
Value(MAX) Unit
1.8
V
10
μA
2
mA
THERMAL RESISTANCES
Symbol
Parameter
Rth(j-c) junction to case(AC) TO-220A(Ins)
Value
2.25
Unit
â/W
TELï¼+86-513-83639777
- 2 / 4-
http://www.jjwdz.com
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