CJU75N06 Datasheet, PDF (2/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – N-Channel Power MOSFET

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T_a=25 Я ^{unless otherwise specified}
Parameter
Symbol
Test Condition
Off characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
V(BR) DSS
I_DSS
I_GSS
VGS = 0V, ID =250µA
VDS =60V, VGS =0V
VDS =0V, VGS =±20V
On characteristics (note2)
Gate-threshold voltage
Static drain-source on-sate resistance
Forward transconductance
VGS(th)
RDS(on)
g_FS
VDS =V_GS, ID =250µA
VGS =10V, ID =30A
VDS =25V, ID =30A
Dynamic characteristics (note 3)
Input capacitance
Output capacitance
Reverse transfer capacitance
C_iss
C_oss
C_rss
VDS =25V,VGS =0V,
f =1MHz
Switching characteristics (note 3)
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Q_g
Q_gs
Q_gd
td(on)
tr
td(off)
tf
V_DS=30V, V_GS=10V,
I_D=30A
V_DD=30V,V_GS=10V,
R_G=2.5Ω, I_D=2A,
R_L=15Ω
Drain-Source Diode Characteristics
Drain-source diode forward voltage(note2)
Continuous drain-source diode forward
current
V_SD
VGS =0V, I_S=30A
I_S
Pulsed drain-source diode forward current
I_SM
Notes:
1. L=0.5mH,V_DD=30V,V_G=10V,R_G=25Ω,Starting T_J=25℃.
2. Pulse Test : Pulse Width≤300µs, duty cycle ≤2%.
3. Guaranteed by design, not subject to production.
Min Typ
Max Unit
60
68
V
1
µA
±100
nA
2
2.7
4
V
9.1
11.5
mΩ
20
S
2350
237
pF
205
50
12
nC
16
16
10
ns
45
12
1.2
V
75
A
300
A
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2
A-2,Mar,2016