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CJU75N06 Datasheet, PDF (1/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – N-Channel Power MOSFET | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate MOSFETS
CJU75N06 N-Channel Power MOSFET
V(BR)DSS
RDS(on)MAX
ID
60V
11.5 mΩ@10 V
75A
TO-252-2L
GENERAL DESCRIPTION
The CJU75N06 uses advanced trench technology and design to provide
excellent RDS(on) with low gate charge. It can be used in a wide variety of
applications.
1. GATE
2. DRAIN
3. SOURCE
FEATURE
ï¬ VDS =60V,ID =75A
ï¬ RDS(ON) < 11.5m⦠@ VGS=10V (Typ:9.1mâ¦)
ï¬ Good stability and uniformity with high EAS
ï¬ Excellent package for good heat dissipation
ï¬ High density cell design for ultra low Rdson
ï¬ Special process technology for high ESD capability
ï¬ Fully characterized avalanche voltage and current
MARKING
APPLICATION
ï¬ Power switching application
ï¬ Hard switched and high frequency circuits
ï¬ Uninterruptible power supply
EQUIVALENT CIRCUIT
CJU75N06= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
Maximum ratings (Ta=25â unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy (note1)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Maximum lead temperature for soldering purposes ,
1/8âfrom case for 5 seconds
Symbol
VDS
VGS
ID
IDM
EAS
RθJA
TJ
TSTG
TL
Value
60
±20
75
300
300
100
150
-55 ~+150
260
Unit
V
A
mJ
â/W
â
www.cj-elec.com
1
A-2,Mar,2016
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