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| BC847PN Datasheet, PDF (2/6 Pages) Siemens Semiconductor Group – NPN/PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) | |||
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MAXIMUM RATINGS TR2 (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-45
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current âContinuous
-0.1
A
PC*
Collector Power Dissipation
200
mW
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55-150
â
CHARACTERISTICS of TR2 (PNP Transistor) (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Noise figure
Symbol Test conditions
MIN TYP MAX UNIT
V(BR)CBO IC=-10μA,IE=0
-50
V
V(BR)CEO IC=-10mA,IB=0
-45
V
V(BR)EBO IE=-1μA,IC=0
-5
V
ICBO VCB=-30V,IE=0
-15 nA
IEBO VEB=-5V,IC=0
-15 nA
hFE1 VCE=-5V,IC=-2mA
220
475
VCE(sat) IC=-10mA,IB=-0.5mA
-0.3 V
VCE(sat) IC=-100mA,IB=-5mA
-0.65 V
VBE(sat) IC=-10mA,IB=-0.5mA
-0.7
V
VBE(sat) IC=-100mA,IB=-5mA
-0.95 V
VBE(on) VCE=-5V,IC=-2mA
-0.6
-0.75 V
VBE(on) VCE=-5V,IC=-10mA
-0.82 V
Cob VCB=-10V,IE=0,f=1MHz
4.5 pF
fT VCE=-5V,IC=-10mA,f=100MHz 100
MHz
VCE=-5V,Ic=-0.2mA,
NF
f=1kHz,Rg=2Kâ¦, âf=200Hz
10
dB
www.cj-elec.com
2
AE,J,Muna,r2,2001146
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