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| BC847PN Datasheet, PDF (1/6 Pages) Siemens Semiconductor Group – NPN/PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) | |||
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JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Transistors
BC847PN DUAL TRANSISTOR (NPN+PNP)
SOT-363
FEATURES
z Epitaxial Die Construction
z Two isolated NPN/PNP(BC847W+BC857W) Transistors in one package
MAKING: 7P
MAXIMUM RATINGS TR1 (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
45
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current âContinuous
0.1
A
PC
Collector Power Dissipation
200
mW
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55-150
â
CHARACTERISTICS of TR1 (NPN Transistor) (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Noise figure
Symbol Test conditions
V(BR)CBO IC=10μA,IE=0
V(BR)CEO IC=10mA,IB=0
V(BR)EBO IE=1μA,IC=0
ICBO
VCB=30V,IE=0
IEBO
VEB=5V,IC=0
hFE
VCE=5V,IC=2mA
VCE(sat) IC=10mA,IB=0.5mA
VCE(sat) IC=100mA,IB=5mA
VBE(sat) IC=10mA,IB=0.5mA
VBE(sat) IC=100mA,IB=5mA
VBE(on) VCE=5V,IC=2mA
VBE(on) VCE=5V,IC=10mA
Cob
VCB=10V,IE=0,f=1MHz
fT
VCE=5V,IC=10mA,f=100MHz
VCE=5V,Ic=0.2mA,
NF
f=1kHz,Rg=2Kâ¦,âf=200Hz
Min Typ Max Unit
50
V
45
V
6
V
15
nA
15
nA
200
450
0.25
V
0.6
V
0.7
V
0.9
V
0.58
0.7
V
0.72
V
6.0
pF
100
MHz
10
dB
www.cj-elec.com
1
AE,J,uMna,2r,0210416
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