3DD13003B Datasheet, PDF (2/4 Pages) Weitron Technology – NPNPlastic-Encapsulate Transistor

Typical Characteristics
800
COMMON
EMITTER
700 T =25℃
a
600
500
400
300
Static Characteristic
40mA
36mA
32mA
28mA
24mA
20mA
16mA
12mA
200
100
0
0
1200
8mA
I =4mA
B
2
4
6
8
10
12
14
COLLECTOR-EMITTER VOLTAGE V (V)
CE
V
—— I
BEsat
c
1000
800
β=5,T =25℃
a
β=3,T =25℃
a
600
400
β=5,T =100 ℃
a
β=3,T =100 ℃
a
200
0.1
1
10
100
COLLECTOR CURREMT I (mA)
C
1500
1000
I —— V
C
BE
COMMON EMITTER
V =10V
CE
100
1000 1500
10
1
0.1
200
2000
1000
100
10
400
600
800
BASE-EMMITER VOLTAGE V (mV)
BE
C /C — — V /V
ob ib
CB EB
C
ib
1000
f=1MHz
I =0/I =0
C
E
T =25 ℃
a
C
ob
h —— I
FE
C
100
COMMON EMITTER
V = 10V
CE
T =100℃
a
T =25℃
a
10
1
1
1000
10
100
COLLECTOR CURRENT I (mA)
C
V
——
CEsat
I
C
1000 1500
β=5,T =25℃
a
100
β=3,T =25℃
a
β=5,T =100 ℃
a
β=3,T =100 ℃
a
10
0.1
1
10
100
COLLECTOR CURRENT I (mA)
C
f —— I
T
C
5
COMMON EMITTER
VCE=10V
T =25℃
4
a
1000 1500
3
2
1
0
10 20
1200
40
60
80
100
120
140
COLLECTOR CURRENT I (mA)
C
P —— T
C
a
900
600
300
1
0.1
1
10
30
0
0
25
50
75
100
125
150
REVERSE VOLTAGE V (V)
AMBIENT TEMPERATURE T (℃)
a
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E,Aug,2016