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| 3DD13003B Datasheet, PDF (1/4 Pages) Weitron Technology – NPNPlastic-Encapsulate Transistor | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
3DD13003B TRANSISTOR( NPN )
FEATURES
· power switching applications
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
Unit
700
V
400
V
9
V
1.5
A
0.9
W
150
â
-55~150
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition Frequency
Fall time
Storage time
Symbol
Test conditions
Min
V(BR)CBO IC= 1mA, IE=0
700
V(BR)CEO IC= 10mA, IB=0
400
V(BR)EBO IE= 1mA, IC=0
9
ICBO
VCB= 700V, IE=0
ICEO
VCE= 400V, IB=0
IEBO
VEB= 7V, IC=0
hFE
VCE= 10V, IC= 0.4 A
20
VCE(sat)1 IC=1.5A,IB= 0.5A
VCE(sat)2 IC=0.5A, IB= 0.1A
VBE(sat)
IC=0.5A, IB=0.1A
fT
VCE=10V,IC=100mA, f =1MHz
4
tf
IC=1A
ts
IB1=-IB2=0.2A
Typ Max Unit
V
V
V
100
µA
50
µA
10
µA
40
3
V
0.8
V
1
V
MHz
0.7
µs
4
µs
CLASSIFICATION OF hFE
Rank
Range
20-25
25-30
30-35
35-40
www.cj-elec.com
1
E,Aug,2016
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