3DD13002N46 Datasheet, PDF (2/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR(NPN)

Typical Characteristics
350
COMMON
300 ^EMITTER
T =25℃
a
250
200
150
Static Characteristic
15mA
13.5mA
12mA
10.5mA
9mA
7.5mA
6mA
100
50
0
0
4.5mA
3mA
I =1.5mA
B
2
4
6
8
10
12
14
16
COLLECTOR-EMITTER VOLTAGE V (V)
CE
1000
β=5
V —— I
BEsat
C
800
T =25℃
a
600
T =100℃
a
400
200
0
0.1
1
10
100
800
COLLECTOR CURRENT I (mA)
C
V —— I
BE
C
800
VCE=10V
600
400
Ta=100 ^oC
Ta=25℃
200
50
40
30
20
10
0
1
1000
β=5
800
600
400
200
0
0.1
1000
100
h —— I
FE
C
T =100 oC
a
T =25 ^oC
a
V = 10V
CE
10
100
800
COLLECTOR CURRENT I (mA)
C
V —— I
CEsat
C
T =100℃
a
1
10
100
COLLECTOR CURRENT I (mA)
C
T =25℃
a
700
C / C ——
ob
ib
V /V
CB
EB
f=1MHz
I =0 / I =0
E
C
T =25 oC
a
C
ib
10
C
ob
0
1
200
400
600
800
1000
0.1
BASE-EMITTER VOLTAGE V (mV)
BE
P —— T
c
a
1000
800
600
400
200
0
0
25
50
75
100
125
AMBIENT TEMPERATURE T (℃)
a
www.cj-elec.com
150
2
1
10
20
REVERSE VOLTAGE V (V)
B,Dec,2015