3DD13002N46 Datasheet, PDF (1/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR(NPN)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
3DD13002N46 TRANSISTOR（NPN）
TO-92
FEATURE
3ower 6witching $pplications
1.EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
2. COLLECTOR
Symbol
V_CBO
Parameter
Collector-Base Voltage
Value
Unit
600
V
3. BASE
V_CEO
Collector-Emitter Voltage
00
V
V_EBO
Emitter-Base Voltage
6
V
I_C
Collector Current -Continuous
0.8
A
P_C
Collector Power Dissipation
0.8
R_θJA
 Thermal Resistance from Junction
to Ambient
156
W
℃/W
T_J
Junction Temperature
150
℃
T_stg
Storage Temperature
-55~150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Collector-base breakdown voltage
V_(BR)CBO
I_C=100μA,I_E=0
600
Collector-emitter breakdown voltage V(BR)CEO
I_C=1mA,I_B=0
00
Emitter-base breakdown voltage
V_(BR)EBO
I_E= 100μA,I_C=0
6
Collector cut-off current
I_CBO
V_CB= 600V,I_E=0
I_CEO
V_CE= 500V,I_B=0
Emitter cut-off current
I_EBO
V_EB= 6 V, I_C=0
Dccurrentgain
h_FE1
V_CE= 10 V, I_C=200mA
9
h_FE2
V_CE= 10 V, I_C=0.25mA
5
Collector-emitter saturation voltage
V_CE(sat)
I_C=200mA, I_B=40mA
Base-emitter saturation voltage
Transition frequency
Fall time
Storage time
CLASSIFICATION OF hFE₁
Range
9-15
V_BE(sat)
I_C=200mA, I_B=40mA
V_CE=10V, I_C=100mA
f_T
5
f =1MHz
t_f
I_C=1A,I_B1=-I_B2=0.2A
t_s
V_CC=100V
15-20
20-25
25-30
30-35
Max Unit
V
V
V
100
µA
100
µA
100
µA
40
0.5
V
1.1
V
MHz
0.5
µs
2.5
µs
35-40
www.cj-elec.com
1
B,Dec,2015