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| CJP50N06 Datasheet, PDF (3/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – N-Channel Power MOSFET | |||
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7\SLFDO&KDUDFWHULVWLFV
Output Characteristics
1000
VGS= 15,10V
100
10
1
Ta=25â
Pulsed
VGS= 8V
VGS= 7V
VGS= 6V
VGS= 5.5V
VGS= 5V
VGS= 4.5V
0.1
0.1
1
10
100
DRAIN TO SOURCE VOLTAGE VDS (V)
36
34 Ta=25â
32 Pulsed
RDS(ON) ââ ID
30
28
VGS=4.5V
26
24
22
20
18
16
14
VGS=10V
12
10
8
0
10
20
30
40
50
60
70
80
DRAIN CURRENT ID (A)
100
Pulsed
IS ââ VSD
10
Ta=100â
1
Ta=25â
0.1
0.01
1E-3
0
200
400
600
800
1000
1200
1400
SOURCE TO DRAIN VOLTAGE VSD (mV)
1600
1000
VDS=25.0V
Pulsed
Transfer Characteristics
100
Ta=25â
10
1
4
5
6
7
8
9
10
GATE TO SOURCE VOLTAGE VGS (V)
RDS(ON)ââ VGS
60
56
Pulsed
52
ID=20A
48
44
40
36
32
28
24
Ta=100â
20
16
Ta=25â
12
8
3
4
5
6
7
8
9
10
GATE TO SOURCE VOLTAGE VGS (V)
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
25
Threshold Voltage
ID=250uA
50
75
100
125
JUNCTION TEMPERATURE TJ (â)
www.cj-elec.com
3
A-3,Apr,2016
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