CJP50N06 Datasheet, PDF (1/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – N-Channel Power MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L-C Plastic-Encapsulate MOSFETS
CJP50N06
V_(BR)DSS
60V
N-Channel Power MOSFET
R_DS(on)MAX
I_D
20mΩ@10V
50A
TO-220-3L-C
GENERAL DESCRIPTION
The CJP50N06 uses advanced trench technology and design to
provide excellent R_DS(ON) with low gate charge. It can be used in a 1. GATE
wide variety of applications.
FEATURE
2. DRAIN
3. SOURCE
1₂₃
z High density cell design for ultra low R_dson
z Fully characterized avalanche voltage and current
z Good stability and uniformity with high E_AS
z Excellent package for good heat dissipation
z Special process technology for high ESD capability
APPLICATION
z Power switching application
z Hard switched and high frequency circuits
z Uninterruptible power supply
MARKING
EQUIVALENT CIRCUIT
CJP50N06
XXX
GD S
CJP50N06= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
I_D
Pulsed Drain Current
I_DM
Single Pulsed Avalanche Energy*
E_AS
Power Dissipation
P_D
Thermal Resistance from Junction to Ambient
R_θJA
Junction Temperature
T_J
Storage Temperature
T_stg
*E_AS condition: T_j=25℃,V_DD=50V,L=0.5mH, R_G=25Ω, Starting T_J = 25°C
Va lue
60
±20
50
220
115
2
62.5
150
-50 ~+150
Unit
V
A
mJ
W
℃/W
℃
www.cj-elec.com
1
A-3,Apr,2016