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| CJP04N60 Datasheet, PDF (3/4 Pages) ZP Semiconductor – 6 0 0V N-Channel Power MOSFET | |||
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7\SLFDO&KDUDFWHULVWLFV
Output Characteristics
6
Pulsed VGS= 8Vã10V
5
VGS=6V
4
3
VGS=5.5V
2
1
VGS=5V
0
0
10
20
30
40
DRAIN TO SOURCE VOLTAGE VDS (V)
3.0
Ta=25â
Pulsed
2.5
R
DS(ON)
ââ
I
D
VGS=10V
2.0
1.5
1.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
DRAIN CURRENT ID (A)
4
Pulsed
1
I
S
ââ
V
SD
Ta=100â
Ta=25â
0.1
0.01
1E-3
0.0
0.4
0.8
1.2
1.6
SOURCE TO DRAIN VOLTAGE VSD (V)
2.0
VDS=10V
Pulsed
1.5
Transfer Characteristics
1.0
Ta=100â
Ta=25â
0.5
0.0
0
1
2
3
4
5
6
7
8
GATE TO SOURCE VOLTAGE VGS (V)
RDS(ON)ââ
V
GS
12
Pulsed
ID=2A
10
8
Ta=100â
Ta=25â
6
4
2
0
2
4
6
8
10
GATE TO SOURCE VOLTAGE VGS (V)
Threshold Voltage
5
4
3
ID=250uA
2
1
0
25
50
75
100
125
JUNCTION TEMPERATURE TJ (â)
www.cj-elec.com
3
G,Apr,2016
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