CJP04N60 Datasheet, PDF (1/4 Pages) ZP Semiconductor – 6 0 0V N-Channel Power MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate MOSFETS
CJP04N60
V_(BR)DSS
600V
600V N-Channel Power MOSFET
R_DS(on)MAX
I_D
3Ω@10V
4A
TO-220-3L
General Description
This advanced high voltage MOSFET is designed to wighstand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode wigh fast
1. GATE
2. DRAIN
3. SOURCE
1_{2 3}
recovery time. Desighed for high voltage, high speed switching
applications such as power supplies, converters, power motor controls
and bridge circuits.
FEATURE
z High Current Rating
z Lower R_ds(on)
z Lower Capacitance
z Lower Total Gate Charge
z Tighter VSD Specifications
z Avalanche Energy Specified
MARKING
EQUIVALENT CIRCUIT
CJP04N60= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain-Source Diode Forward Current
Single Pulsed Avalanche Energy (note1)
Thermal Resistance fromJunction to Ambient
Operating and Storage Temperature Range
Maximum lead temperure for soldering purposes ,
1/8”from case for 5 seconds
Symbol
V_DS
V_GSS
I_D
I_S
E_AS
R_θJA
T_J, T_STG
T_L
www.cj-elec.com
1
Value
600
±30
4.0
4.0
260
62.5
-55 ~+150
260
Units
V
A
mJ
℃/W
℃
G,Apr,2016